Ụkpụrụ na ọnọdụ dị ugbu a nkeihe nchọpụta foto nke nnukwu ebili mmiri (ihe nchọpụta foto APD) Nkebi nke Abụọ
2.2 Nhazi APD chip
Nhazi chip ezi uche dị na ya bụ ihe nkwa bụ isi maka ngwaọrụ arụmọrụ dị elu. Nhazi nhazi nke APD na-atụlekarị oge RC, njide oghere na heterojunction, oge njem ụgbọelu site na mpaghara mmebi na ihe ndị ọzọ. A chịkọtara mmepe nke nhazi ya n'okpuru:
(1) Nhazi bụ isi
Nhazi APD kachasị mfe dabere na PIN photodiode, mpaghara P na mpaghara N nwere nnukwu doped, a na-ewebata mpaghara N-ụdị ma ọ bụ P-ụdị dobely-repellant na mpaghara P ma ọ bụ mpaghara N dị nso iji mepụta elektrọn nke abụọ na oghere abụọ, ka e wee nweta mmụba nke fotocurrent mbụ. Maka ihe usoro InP, n'ihi na ọnụọgụ ionization mmetụta oghere karịrị ọnụọgụ ionization mmetụta electron, a na-etinyekarị mpaghara gain nke doping ụdị N na mpaghara P. N'ọnọdụ dị mma, naanị oghere ka a na-agba n'ime mpaghara gain, yabụ a na-akpọ nhazi a nhazi nwere oghere.
(2) A na-amata nnabata na uru dị iche iche
N'ihi njirimara oghere band sara mbara nke InP (InP bụ 1.35eV na InGaAs bụ 0.75eV), a na-ejikarị InP eme ihe dị ka ihe mpaghara uru na InGaAs dị ka ihe mpaghara nnabata.
(3) A na-atụ aro nhazi absorption, gradient na gain (SAGM) n'otu n'otu
Ugbu a, ọtụtụ ngwaọrụ APD azụmaahịa na-eji ihe InP/InGaAs, InGaAs dị ka oyi akwa nnabata, InP n'okpuru oke ọkụ eletrik (>5x105V/cm) na-enweghị mmebi, enwere ike iji ya dị ka ihe mpaghara uru. Maka ihe a, imewe nke APD a bụ na usoro oke mmiri na-etolite na InP ụdị N site na nkpọkọ nke oghere. N'ịtụle nnukwu ọdịiche dị na oghere band dị n'etiti InP na InGaAs, ọdịiche ọkwa ike nke ihe dị ka 0.4eV na band valence na-eme ka oghere ndị e mepụtara na oyi akwa nnabata InGaAs gbochie na nsọtụ heterojunction tupu ha erute oyi akwa mmụba InP ma na-ebelata ọsọ nke ukwuu, na-ebute oge nzaghachi ogologo na obere bandwit nke APD a. Enwere ike idozi nsogbu a site na ịgbakwunye oyi akwa mgbanwe InGaAsP n'etiti ihe abụọ ahụ.
(4) A na-atụ aro nhazi absorption, gradient, charge na gain (SAGCM) n'otu n'otu
Iji gbanwee nkesa ọkụ eletrik nke oyi akwa nnabata na oyi akwa uru, a na-etinye oyi akwa chajị n'ime imewe ngwaọrụ ahụ, nke na-eme ka ọsọ na nzaghachi ngwaọrụ ahụ ka mma nke ukwuu.
(5) Nhazi SAGCM emelitere (RCE) nke Resonator
N'ihe e ji mee nchọpụta ọdịnala nke ọma, anyị ga-eche ihu na ọkpụrụkpụ nke oyi akwa nnabata bụ ihe na-emegiderịta onwe ya maka ọsọ ngwaọrụ na arụmọrụ quantum. Ọkpụrụkpụ dị gịrịgịrị nke oyi akwa nnabata nwere ike ibelata oge njem onye na-ebu ya, yabụ enwere ike nweta nnukwu bandwit. Agbanyeghị, n'otu oge ahụ, iji nweta arụmọrụ quantum dị elu, oyi akwa nnabata kwesịrị inwe ọkpụrụkpụ zuru oke. Ngwọta maka nsogbu a nwere ike ịbụ nhazi oghere resonant (RCE), ya bụ, a na-emepụta Bragg Reflector (DBR) nke kesara n'ala na n'elu ngwaọrụ ahụ. Enyo DBR nwere ụdị ihe abụọ nwere obere index refractive na nnukwu index refractive na nhazi, ha abụọ na-etokwa n'otu aka ahụ, ọkpụrụkpụ nke oyi akwa ọ bụla na-ezute ogologo ebili mmiri ìhè nke merenụ 1/4 na semiconductor. Nhazi resonator nke ihe nchọpụta nwere ike izute ihe achọrọ ọsọ, enwere ike ime ka ọkpụrụkpụ nke oyi akwa nnabata dị gịrịgịrị, a na-amụbakwa arụmọrụ quantum nke elektrọn mgbe ọtụtụ ntụgharị uche gasịrị.
(6) Nhazi nduzi ebili mmiri nke ejikọtara ọnụ (WG-APD)
Ngwọta ọzọ iji dozie esemokwu nke mmetụta dị iche iche nke ọkpụrụkpụ oyi akwa nnabata na ọsọ ngwaọrụ na arụmọrụ quantum bụ iwebata nhazi ebili mmiri jikọtara ọnụ. Nhazi a na-abanye ìhè site n'akụkụ, n'ihi na oyi akwa nnabata dị ogologo nke ukwuu, ọ dị mfe inweta arụmọrụ quantum dị elu, n'otu oge ahụkwa, enwere ike ime ka oyi akwa nnabata dị gịrịgịrị, na-ebelata oge njem ụgbọ ibu. Ya mere, nhazi a na-edozi ntụkwasị obi dị iche iche nke bandwit na arụmọrụ na ọkpụrụkpụ nke oyi akwa nnabata, a na-atụkwa anya na ọ ga-enweta ọnụego dị elu na arụmọrụ quantum dị elu APD. Usoro nke WG-APD dị mfe karịa nke RCE APD, nke na-ewepụ usoro nkwadebe mgbagwoju anya nke enyo DBR. Ya mere, ọ ga-ekwe omume karịa n'ọhịa bara uru ma dabara adaba maka njikọ anya ụgbọelu nkịtị.
3. Mmechi
Mmepe nke nnukwu mmiri ozuzoihe nchọpụta fotoA na-enyocha ihe na ngwaọrụ. Ọnụego ionization nke ihe InP na elektrọn na oghere dị nso na nke InAlAs, nke na-eduga na usoro abụọ nke symbions ndị na-ebu ibu, nke na-eme ka ụlọ avalanche dị ogologo oge ma na-amụba mkpọtụ. Ma e jiri ya tụnyere ihe InAlAs dị ọcha, nhazi olulu mmiri InGaAs (P) /InAlAs na In (Al) GaAs/InAlAs nwere oke mmụba nke coefficients ionization nkwonkwo, yabụ enwere ike ịgbanwe arụmọrụ mkpọtụ nke ukwuu. N'ihe gbasara nhazi, a na-emepụta nhazi SAGCM emelitere (RCE) na nhazi waveguide nke e jikọtara ọnụ (WG-APD) iji dozie ihe ndị na-emegiderịta onwe ha nke mmetụta dị iche iche nke ọkpụrụkpụ oyi akwa nnabata na ọsọ ngwaọrụ na arụmọrụ quantum. N'ihi mgbagwoju anya nke usoro ahụ, ọ dị mkpa ka a nyochaa ngwa zuru oke nke ihe owuwu abụọ a.
Oge ozi: Nọvemba-14-2023