Abstract: Ntọala bụ isi na ụkpụrụ ọrụ nke avalanche photodetector (Onye nyocha foto APD) ewebata, a na-enyocha usoro evolushọn nke usoro ngwaọrụ ahụ, a na-achịkọta ọnọdụ nyocha ugbu a, na mmepe nke APD n'ọdịnihu ga-amụba.
1. Okwu mmalite
Ihe nchọpụta foto bụ ngwaọrụ na-agbanwe akara ọkụ ka ọ bụrụ akara ọkụ eletrik.Na afotodetector semiconductor, onye na-ebu foto na-enwe obi ụtọ site na foton ihe ahụ merenụ na-abanye na sekit dị n'èzí n'okpuru voltaji eleda anya nke etinyere ma mepụta foto nke nwere ike ịlele.Ọbụlagodi na nzaghachi kachasị, PIN photodiode nwere ike mepụta ụzọ abụọ nke oghere eletrọn kacha, nke bụ ngwaọrụ na-enweghị uru dị n'ime.Maka nzaghachi ka ukwuu, enwere ike iji avalanche photodiode (APD) mee ihe.Mmetụta mmụba nke APD na fotocurrent dabere na mmetụta nkukota ionization.N'okpuru ọnọdụ ụfọdụ, igwe eletrọn na oghere nwere ike nweta ume zuru oke iji kpokọta ọnụ na lattice iji mepụta ụzọ abụọ oghere eletrọn ọhụrụ.Usoro a bụ mmeghachi omume yinye, nke mere na ụzọ abụọ nke oghere eletrọn na-emepụta site na mmịnye ọkụ nwere ike imepụta ọnụ ọgụgụ dị ukwuu nke oghere eletrọn wee mepụta nnukwu foto nke abụọ.Ya mere, APD nwere nzaghachi dị elu na uru dị n'ime, nke na-eme ka mgbama na mkpọtụ ụda nke ngwaọrụ ahụ dịkwuo mma.A ga-eji APD eme ihe n'ebe dị anya ma ọ bụ n'usoro nkwurịta okwu fiber ngwa anya nwere oke ndị ọzọ na ike anya enwetara.Ka ọ dị ugbu a, ọtụtụ ndị ọkachamara ngwa anya na-enwe nchekwube banyere atụmanya nke APD, ma kwenyere na nyocha nke APD dị mkpa iji kwalite asọmpi mba ụwa nke ubi ndị metụtara ya.
2. Nka na ụzụ mmepe nkefotodetector nke oke mmiri ozuzo(Onye nyocha foto APD)
2.1 Akụrụngwa
(1)Si fotodetector
Si material technology bụ teknụzụ tozuru okè nke a na-ejikarị eme ihe n'ọhịa nke microelectronics, ma ọ dịghị mma maka nkwadebe nke ngwaọrụ na ogologo ogologo nke 1.31mm na 1.55mm nke a na-anabatakarị n'ọhịa nke nkwurịta okwu anya.
(2) Ge
Ọ bụ ezie na nzaghachi spectral nke Ge APD kwesịrị ekwesị maka ihe ndị chọrọ nke obere ọnwụ na mgbasa ozi dị ala na nnyefe eriri anya, enwere nnukwu nsogbu na usoro nkwadebe.Na mgbakwunye, Ge si eletrọn na oghere ionization ọnụego ruru dị nso () 1, ya mere o siri ike ịkwadebe elu-arụmọrụ APD ngwaọrụ.
(3) N'ime0.53Ga0.47As/InP
Ọ bụ usoro dị irè iji họrọ In0.53Ga0.47D dị ka oyi akwa absorption nke APD na InP dị ka oyi akwa multiplier.The absorption ọnụ ọgụgụ kasị elu nke In0.53Ga0.47 Dị ka ihe bụ 1.65mm, 1.31mm, 1.55mm wavelength bụ banyere 104cm-1 elu absorption ọnụọgụ, nke bụ ihe na-ahọrọ maka absorption oyi akwa nke ìhè detector ugbu a.
(4)InGaAs fotodetector/N'imefotodetector
Site n'ịhọrọ InGaAsP dị ka oyi akwa na-amịkọrọ ọkụ na InP dị ka oyi akwa na-abawanye ụba, APD nwere ogologo nzaghachi nzaghachi nke 1-1.4mm, arụmọrụ quantum dị elu, obere ọchịchịrị dị ugbu a na nnukwu uru mmiri ozuzo.Site n'ịhọrọ ihe dị iche iche alloy, a na-enweta ọrụ kacha mma maka ogologo ogologo oge.
(5)InGaAs/InAlAs
In0.52Al0.48 Dị ka ihe onwunwe nwere a gbalaga ọdịiche (1.47eV) na adịghị etinye ya na wavelength nso nke 1.55mm.E nwere ihe àmà na mkpa In0.52Al0.48 Dị ka epitaxial oyi akwa nwere ike nweta mma uru uru karịa InP dị ka a multiplikator oyi akwa n'okpuru ọnọdụ nke dị ọcha ogwu ogbugba.
(6)InGaAs/InGaAs (P) /InAlAs na InGaAs/In (Al) GaAs/InAlAs
Mmetụta ionization ọnụego nke ihe bụ ihe dị mkpa na-emetụta arụmọrụ nke APD.Nsonaazụ na-egosi na enwere ike imeziwanye ọnụ ọgụgụ ionization nke nkukota oyi akwa site n'iwebata InGaAs (P) / InAlAs na In (Al) GaAs/InAlAs superlattice .Site n'iji ihe nhazi nke superlattice, injinia band nwere ike ijikwa njedebe njedebe asymmetric n'etiti band conduction na valence band values, ma hụ na nkwụsịtụ band conduction dị nnọọ ukwuu karịa nkwụsị nke valence band (ΔEc>> ΔEv).E jiri ya tụnyere InGaAs nnukwu ihe, InGaAs/InAlAs quantum well electron ionization rate (a) na-abawanye nke ukwuu, na electrons na oghere na-enwetakwu ume.N'ihi ΔEc>> ΔEv, enwere ike ịtụ anya na ike nke electrons nwetara na-abawanye ọnụego ionization nke eletrọn karịa onyinye nke oghere ume na ọnụọgụ ionization (b).Oke (k) nke ọnụọgụ elektrọn ionization ọnụego na oghere ionization ọnụego na-abawanye.Ya mere, ngwaahịa bandwit dị elu (GBW) na arụ ọrụ mkpọtụ dị ala nwere ike nweta site n'itinye ihe owuwu superlatice.Agbanyeghị, nke a InGaAs/InAlAs quantum well structure APD, nke nwere ike ịbawanye uru k, siri ike itinye n'ọrụ na ndị nnata anya.Nke a bụ n'ihi na ihe na-abawanye ụba nke na-emetụta nzaghachi kachasị elu na-ejedebe site na ọchịchịrị ugbu a, ọ bụghị ụda ụba.Na nke a Ọdịdị, na ọchịchịrị ugbu a bụ tumadi mere site tunneling mmetụta nke InGaAs ọma oyi akwa na a warara band ọdịiche, otú iwebata a wide-band gap quaternary alloy, dị ka InGaAsP ma ọ bụ InAlGaAs, kama InGaAs dị ka olulu mmiri oyi akwa. nke nhazi olulu mmiri nke quantum nwere ike igbochi ọchịchịrị ugbu a.
Oge nzipu: Nov-13-2023