Nchịkọta: Nhazi bụ isi na ụkpụrụ ọrụ nke ihe nchọpụta foto nke oke mmiri (Avalanche photodetector)ihe nchọpụta foto APD) ewebatara, a na-enyocha usoro evolushọn nke nhazi ngwaọrụ ahụ, a na-achịkọta ọnọdụ nyocha dị ugbu a, a na-amụkwa mmepe APD n'ọdịnihu n'ọdịnihu.
1. Okwu Mmalite
Ihe nchọpụta foto bụ ngwaọrụ nke na-agbanwe akara ọkụ ka ọ bụrụ akara eletriki.ihe nchọpụta foto semiconductor, onye na-ebu foto nke ihe merenụ kpaliri site na foton ahụ na-abanye na sekit mpụga n'okpuru voltaji bias etinyere ma na-emepụta photocurrent a na-atụ aro. Ọbụna na nzaghachi kachasị, fotodiode PIN nwere ike imepụta naanị ụzọ abụọ nke oghere elektrọn, nke bụ ngwaọrụ na-enweghị uru dị n'ime. Maka nzaghachi ka mma, enwere ike iji fotodiode avalanche (APD). Mmetụta mmụba nke APD na photocurrent dabere na mmetụta nkukọ ionization. N'okpuru ọnọdụ ụfọdụ, elektrọn na oghere ndị a na-agba ọsọ nwere ike inweta ike zuru oke iji kụọ aka na lattice iji mepụta ụzọ abụọ nke oghere elektrọn ọhụrụ. Usoro a bụ mmeghachi omume yinye, nke mere na ụzọ abụọ nke oghere elektrọn nke ọkụ na-amịpụta nwere ike imepụta ọtụtụ ụzọ abụọ elektrọn ma mepụta nnukwu fotocurrent nke abụọ. Ya mere, APD nwere nzaghachi dị elu na uru dị n'ime, nke na-eme ka oke mgbaàmà na mkpọtụ nke ngwaọrụ ahụ ka mma. A ga-ejikarị APD eme ihe na sistemụ nkwukọrịta eriri anya dị anya ma ọ bụ obere yana oke ndị ọzọ na ike anya enwetara. Ugbu a, ọtụtụ ndị ọkachamara n'ihe gbasara ngwa anya nwere nnukwu olileanya maka atụmanya nke APD, ma kwenyere na nnyocha nke APD dị mkpa iji mee ka asọmpi mba ụwa nke ngalaba ndị metụtara ya dịkwuo mma.
2. Mmepe teknụzụ nkeihe nchọpụta foto nke nnukwu ebili mmiri(Ihe nchọpụta foto APD)
2.1 Ihe Ndị E Ji Mee Ihe
(1)Si fotodetector
Teknụzụ ihe onwunwe Si bụ teknụzụ tozuru okè nke a na-ejikarị eme ihe n'ọhịa microelectronics, mana ọ dabaraghị maka nkwadebe ngwaọrụ dị n'ogo ogologo nke 1.31mm na 1.55mm nke a na-anabatakarị n'ọhịa nkwukọrịta anya.
(2) Ge
Ọ bụ ezie na mmeghachi omume spectral nke Ge APD dabara adaba maka ihe achọrọ maka obere mfu na obere mgbasa na nnyefe eriri optical, enwere nnukwu ihe isi ike na usoro nkwadebe. Na mgbakwunye, oke ọnụego ionization nke elektrọn na oghere Ge dị nso na () 1, yabụ ọ siri ike ịkwadebe ngwaọrụ APD dị elu.
(3)In0.53Ga0.47As/InP
Ọ bụ ụzọ dị irè isi họrọ In0.53Ga0.47As dị ka oyi akwa nnabata ìhè nke APD na InP dị ka oyi akwa mmụba. Oke nnabata nke ihe In0.53Ga0.47As bụ 1.65mm, ogologo ebili mmiri 1.31mm, 1.55mm dị ihe dị ka 104cm-1 oke nnabata dị elu, nke bụ ihe a na-ahọrọ maka oyi akwa nnabata nke ihe nchọpụta ọkụ ugbu a.
(4)Nchọpụta foto InGaAs/N'imeihe nchọpụta foto
Site n'ịhọrọ InGaAsP dị ka oyi akwa na-amịkọrọ ìhè na InP dị ka oyi akwa mmụba, enwere ike ịkwadebe APD nwere ogologo oge nzaghachi nke 1-1.4mm, arụmọrụ quantum dị elu, obere ọkụ ojii na uru oke mmiri. Site n'ịhọrọ ihe dị iche iche ejiri alloy mee, a na-enweta arụmọrụ kacha mma maka ogologo oge akọwapụtara.
(5)InGaAs/InAlAs
In0.52Al0.48Dịka ihe nwere oghere eriri (1.47eV) ma anaghị anabata ya na oke ebili mmiri nke 1.55mm. E nwere ihe akaebe na In0.52Al0.48As dị gịrịgịrị oyi akwa epitaxial nwere ike nweta njirimara uru ka mma karịa InP dị ka oyi akwa multiplicator n'okpuru ọnọdụ nke ntụtụ elektrọn dị ọcha.
(6)InGaAs/InGaAs (P) /InAlAs na InGaAs/In (Al) GaAs/InAlAs
Ọnụego ionization mmetụta nke ihe dị iche iche bụ ihe dị mkpa na-emetụta arụmọrụ nke APD. Nsonaazụ ya na-egosi na enwere ike imeziwanye ọnụego ionization n'ọkpọkọ nke oyi akwa multiplier site na iwebata nhazi InGaAs (P) /InAlAs na In (Al) GaAs/InAlAs superlattice. Site na iji usoro superlattice, injinia band nwere ike ijikwa nkwụsịtụ akụkụ band asymmetric n'etiti band conduction na ụkpụrụ valence band, ma hụ na nkwụsịtụ band conduction buru ibu karịa nkwụsịtụ band valence (ΔEc>>ΔEv). Ma e jiri ya tụnyere ihe InGaAs buru ibu, ọnụego ionization electron quantum well InGaAs (a) na-amụba nke ukwuu, elektrọn na oghere na-enwetakwa ike ọzọ. N'ihi ΔEc>>ΔEv, a pụrụ ịtụ anya na ike nke elektrọn na-enweta na-eme ka ọnụego ionization electron dịkwuo elu karịa onyinye nke ike oghere na ọnụego ionization oghere (b). Oke (k) nke ọnụego ionization electron na ọnụego ionization oghere na-abawanye. Ya mere, enwere ike nweta ngwaahịa gain-bandwidth dị elu (GBW) na arụmọrụ obere mkpọtụ site na itinye usoro superlattice. Agbanyeghị, nhazi olulu mmiri InGaAs/InAlAs a APD, nke nwere ike ịbawanye uru k, siri ike itinye na ndị nnata anya. Nke a bụ n'ihi na ihe na-amụba ihe na-emetụta nzaghachi kachasị elu bụ nke ọchịchịrị na-ejedebe, ọ bụghị mkpọtụ multiplier. N'ime nhazi a, ọwa gbara ọchịchịrị na-abụkarị site na mmetụta ọwara nke oyi akwa olulu mmiri InGaAs nwere oghere band dị warara, yabụ ntinye nke alloy quaternary nke oghere band sara mbara, dị ka InGaAsP ma ọ bụ InAlGaAs, kama InGaAs dị ka oyi akwa olulu mmiri nke nhazi olulu mmiri quantum nwere ike igbochi ọwa gbara ọchịchịrị.
Oge ozi: Nọvemba-13-2023