Ọdịdị nke InGaAs fotodetector

Ọdịdị nkeInGaAs fotodetector

Kemgbe 1980s, ndị nchọpụta nọ n'ụlọ na ná mba ọzọ amụwo usoro nke InGaAs photodetectors, nke a na-ekewa n'ime ụdị atọ. Ha bụ InGaAs metal-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), na InGaAs Avalanche Photodetector (APD-PD). Enwere ọdịiche dị ịrịba ama na usoro mmepụta ihe na ọnụ ahịa nke InGaAs fotodetectors nwere usoro dị iche iche, na e nwekwara nnukwu ọdịiche dị na arụmọrụ ngwaọrụ.

The InGaAs metal-semiconductor-metalfotodetector, egosiri na eserese (a), bụ ihe owuwu pụrụ iche dabere na nkwụsị nke Schottky. Na 1992, Shi et al. jiri obere nrụgide metal-organic vapor phase epitaxy technology (LP-MOVPE) na-eto eto epitaxy n'ígwé na kwadebere InGaAs MSM photodetector, nke nwere A elu nzaghachi nke 0.42 A / W na a wavelength nke 1.3 μm na a gbara ọchịchịrị ugbu a dị ala karịa 5.6 pA / μm² na 1.5 V. Na 1996, zhang et al. ejiri gas na-adọkpụ molecular beam epitaxy (GSMBE) na-eto eto InAlAs-InGaAs-InP epitaxy oyi akwa. Igwe oyi akwa InAlAs gosipụtara njirimara resistivity dị elu, yana ọnọdụ uto na-eme ka ọ dịkwuo mma site na nha diffraction X-ray, nke mere na ndakọrịta lattice n'etiti InGaAs na InAlAs dị n'ime oke nke 1 × 10⁻³. Nke a na-ebute arụmọrụ ngwaọrụ kachasị na nke ugbu a gbara ọchịchịrị dị n'okpuru 0.75 pA/μm² na 10 V na nzaghachi ngwa ngwa ruo 16 ps na 5 V. N'ozuzu ya, fotodetector nhazi MSM dị mfe ma dị mfe ijikọ, na-egosi obere ọchịchịrị gbara ọchịchịrị (pA). iji), ma metal electrode ga-ebelata irè ìhè absorption mpaghara nke ngwaọrụ, otú nzaghachi dị ala karịa ndị ọzọ owuwu.

InGaAs PIN fotodetector na-etinye oyi akwa dị n'etiti oyi akwa kọntaktị ụdị P na ụdị kọntaktị N, dị ka egosiri na Figure (b), nke na-eme ka obosara nke mpaghara mmebi ahụ dịkwuo elu, si otú ahụ na-amụba ụzọ abụọ electron-oghere ma na-akpụ a. nnukwu fotocurrent, n'ihi ya, ọ nwere ọmarịcha arụmọrụ elektrọn. Na 2007, A.Poloczek et al. jiri MBE tolite oyi akwa mkpuchi na-ekpo ọkụ na-eme ka ọ dịkwuo mma n'elu ma merie nhụsianya lattice n'etiti Si na InP. A na-eji MOCVD jikọta nhazi InGaAs PIN na ntinye InP, na nzaghachi nke ngwaọrụ ahụ bụ ihe dịka 0.57A / W. N'afọ 2011, Laboratory Research Laboratory (ALR) jiri PIN photodetectors mụọ ihe onyonyo liDAR maka ịnyagharị, mgbochi mgbochi / mgbanaka, na nchọpụta ebumnuche dị mkpirikpi maka obere ụgbọ ala ndị na-enweghị mmadụ, jikọtara ya na mgbawa ngwa ngwa ngwa ngwa dị ọnụ ala. kwalitere oke mgbama na mkpọtụ nke InGaAs PIN fotodetector. Na ndabere nke a, na 2012, ALR ji ihe onyonyo liDAR a maka rọbọt, nwere oke nchọta karịrị 50m yana mkpebi nke 256 × 128.

Ndị InGaAfotodetector nke oke mmiri ozuzobụ ụdị fotodetector nwere uru, usoro nke egosiri na eserese (c). Otu ụzọ oghere eletrọn na-enweta ike zuru oke n'okpuru ọrụ nke ọkụ eletrik n'ime mpaghara okpukpu abụọ, ka ha wee daa na atom, mepụta ụzọ abụọ-oghere eletrọn ọhụrụ, mepụta mmetụta oke mmiri, wee mụbaa ndị na-ebu enweghị nha n'ihe. . Na 2013, George M ji MBE na-eto eto lattice dakọtara InGaAs na InAlAs alloys on InP substrate, na-eji mgbanwe na alloy mejupụtara, epitaxial oyi akwa ọkpụrụkpụ, na doping ka modulated ụgbọelu ume na-ebuli electroshock ionization mgbe ibelata oghere ionization. N'ihe nrịbama mmepụta nhata nhata, APD na-egosi mkpọtụ dị ala yana obere ọchịchịrị ugbu a. Na 2016, Sun Jianfeng et al. wuru usoro nyocha nyocha nke 1570 nm laser na-arụ ọrụ onyonyo dabere na InGaAs avalanche photodetector. The esịtidem sekit nkeOnye nyocha foto APDnatara nkwughachi ma wepụta akara dijitalụ ozugbo, na-eme ka ngwaọrụ ahụ niile gbakọọ. E gosipụtara nsonaazụ nnwale ahụ na FIG. (d) na (e). Ọgụgụ (d) bụ foto anụ ahụ nke ebumnuche onyonyo, na eserese (e) bụ onyonyo dị anya nwere akụkụ atọ. Enwere ike ịhụ nke ọma na mpaghara windo nke mpaghara c nwere ebe dị omimi na mpaghara A na b. Ikpo okwu na-achọpụta obosara usu ihe na-erughị 10 ns, otu ike usu (1 ~ 3) mJ nwere ike imeghari, na-anata oghere oghere Angle nke 2 Celsius, ugboro ugboro nke 1 kHz, ọrụ nchọpụta ihe dị ka 60%. N'ihi uru APD nke ime foto ugbu a, nzaghachi ngwa ngwa, nha kọmpat, ịdịte aka na ọnụ ala dị ala, ndị na-ahụ maka foto APD nwere ike ịbụ usoro ịdị elu dị elu na ọnụọgụ nchọpụta karịa PIN fotodetectors, yabụ liDAR nke ugbu a na-abụkarị ndị na-achọpụta ihe na-ahụ maka oke mmiri.

N'ozuzu, na ngwa ngwa mmepe nke InGaAs nkwadebe technology n'ụlọ na ná mba ọzọ, anyị nwere ike nkà iji MBE, MOCVD, LPE na teknụzụ ndị ọzọ iji kwadebe nnukwu-mpaghara elu-edu InGaAs epitaxial oyi akwa on InP substrate. InGaAs fotodetectors na-egosipụta obere ọchịchịrị dị ugbu a yana nzaghachi dị elu, nke dị ugbu a gbara ọchịchịrị dị ala karịa 0.75 pA/μm², nzaghachi kachasị elu ruru 0.57 A/W, ma nwee nzaghachi ngwa ngwa na-agafe agafe (usoro ps). Ọdịnihu mmepe nke InGaAs photodetectors ga-elekwasị anya n'akụkụ abụọ ndị a: (1) InGaAs epitaxial oyi akwa na-eto ozugbo na Si mkpụrụ. Ka ọ dị ugbu a, ọtụtụ n'ime ngwaọrụ microelectronic dị na ahịa bụ Si dabere na mmepe InGaAs na Si na-esote bụ usoro n'ozuzu ya. Ịdozi nsogbu dị ka lattice mismatch na thermal expansion coefficient iche dị oké mkpa maka ọmụmụ nke InGaAs / Si; (2) Teknụzụ ikuku nke 1550 nm etoola, na ogologo ogologo ogologo (2.0 ~ 2.5) μm bụ ntụzịaka nyocha n'ọdịnihu. Site na mmụba nke In components, lattice mismatch n'etiti InP substrate na InGaAs epitaxial Layer ga-eduga n'ịgbasawanye njọ na ntụpọ, ya mere ọ dị mkpa iji bulie usoro usoro ngwaọrụ ahụ, belata ntụpọ lattice, ma belata ngwaọrụ gbara ọchịchịrị ugbu a.