Ihe nchọpụta foto otuagbajila 80% ngwungwu arụmọrụ
Otu fotofotodetectorA na-ejikarị ya eme ihe n'ọhịa nke quantum photonics na otu foto foto n'ihi uru ha dị ọnụ na ọnụ ala, mana ha na-eche ihu n'azụ mgbochi teknụzụ ndị a.
Oke teknuzu dị ugbu a
1.CMOS na thin-junction SPAD: Ọ bụ ezie na ha nwere njikọ dị elu na obere oge jitter, oyi akwa absorption dị mkpa (mkpụrụkpụ micrometers ole na ole), na PDE na-ejedebe na mpaghara infrared dị nso, na naanị 32% na 850 nm.
2. Okpokoro-njikọ SPAD: Ọ na-egosipụta ihe absorption oyi akwa iri iri nke micrometers oké. Ngwaahịa azụmaahịa nwere PDE nke ihe dịka 70% na 780 nm, mana ịgbaji site na 80% bụ nnukwu ihe ịma aka.
3. Gụpụta oke sekit: SPAD dị egwu na-achọ voltaji overbias nke karịrị 30V iji hụ na enwere ike ibu oke oke oke. Ọbụlagodi na voltaji na-emenyụ ọkụ nke 68V na sekit ọdịnala, PDE nwere ike ịbawanye na 75.1%.
Ngwọta
Kwalite nhazi semiconductor nke SPAD. Nhazi azụ nwere ọkụ: fotons merenụ na-emebi nke ukwuu na silicon. Ihe owuwu a na-enwu n'azụ na-eme ka a mara na ọtụtụ photons na-etinye uche na oyi akwa nke absorption, na electrons emepụtara na-agbanye n'ime mpaghara oke oke mmiri. N'ihi na ọnụọgụ ionization nke eletrọn na silicon dị elu karịa nke oghere, ntụtụ elektrọn na-enye ohere dị elu nke oke mmiri ozuzo. Mkpesa nkwụghachi ụgwọ mpaghara oke oke mmiri: Site na iji usoro mgbasa ozi na-aga n'ihu nke boron na phosphorus, a na-akwụghachi doping na-emighị emi iji tinye uche n'ọhịa eletrik na mpaghara miri emi nwere ntụpọ kristal ole na ole, na-ebelata mkpọtụ dị ka DCR.
2. Sekit na-agụ ihe dị elu. 50V elu njupụta na-emenyụ mgbanwe steeti ngwa ngwa; Ọrụ Multimodal: Site na ijikọ njikwa FPGA QUENCHING na RESET, mgbanwe mgbanwe n'etiti ọrụ efu (signal trigger), gating (mpụga GATE mpụga), na ụdị ngwakọ na-enweta.
3. Nkwadebe ngwaọrụ na nkwakọ ngwaahịa. A na-anabata usoro wafer SPAD, yana ngwugwu urukurubụba. A na-ejikọta SPAD na ihe ndị na-ebu AlN ma tinye ya na ngwa nju oyi (TEC), na a na-enweta njikwa okpomọkụ site na thermistor. Multimode optical fibers na-adakọrịrị na etiti SPAD iji nweta njikọta nke ọma.
4. Mmezi arụmọrụ. Emere calibration site na iji 785 nm picosecond pulsed laser diode (100 kHz) na ihe ntụgharị oge-dijitalụ (TDC, mkpebi 10ps).
Nchịkọta
Site n'ịkwalite usoro SPAD (oke junction, azụ na-enwu, ụgwọ doping) na ịmepụta sekit 50 V quenching, ọmụmụ ihe a mere ka PDE nke onye na-ahụ maka foto foto silicon na elu ọhụrụ nke 84.4%. N'iji ya tụnyere ngwaahịa azụmaahịa, arụ ọrụ ya zuru oke agbalitela nke ọma, na-enye ihe ngwọta bara uru maka ngwa dị ka nkwurịta okwu quantum, kọmpụta quantum, na ihe mmetụta uche dị elu nke na-achọ ọrụ dị oke elu na ịrụ ọrụ mgbanwe. Ọrụ a etinyela ntọala siri ike maka mmepe mmepe nke dabere na siliconihe nchọpụta otu fototeknụzụ.
Oge nzipu: Ọkt-28-2025




