Infrared dị oberefotodetector nke oke mmiri ozuzo
Ihe nchọpụta foto infrared avalanche (Onye nyocha foto APD) bụ klas nkesemiconductor fotoelectric ngwaọrụnke na-emepụta uru dị elu site na mmetụta ionization nkukota, iji nweta ikike nchọpụta nke foton ole na ole ma ọ bụ ọbụna otu foto. Otú ọ dị, na ot APD photodetector owuwu, ndị na-abụghị nha nha ụgbọelu agbasasị usoro na-eduga ná ike ọnwụ, dị otú ahụ na avalanche threshold voltaji na-emekarị kwesịrị iru 50-200 V. Nke a na-etinye elu chọrọ na ngwaọrụ si mbanye volta na readout imewe sekit, na-abawanye na-akwụ ụgwọ na ịmachi wider ngwa.
N'oge na-adịbeghị anya, nyocha ndị China atụpụtala usoro ọhụrụ nke oke oke mmiri n'akụkụ ihe nchọta infrared nwere voltaji dị ala na nnukwu mmetụta. Dabere na homojunction nke onwe-doping nke atomic oyi akwa, avalanche photodetector na-edozi mgbaghara na-emerụ ahụ nke na-akpata site na ọnọdụ ntụpọ interface bụ nke a na-apụghị izere ezere na heterojunction. Ka ọ dị ugbu a, a na-eji mpaghara ọkụ eletrik siri ike nke "ọnụ ọgụgụ" nke mpaghara na-ebute site na nkwụsịtụ symmetry iji kwalite mmekọrịta coulomb n'etiti ndị na-ebu ụgbọ elu, na-egbochi mgbasa ozi nke ikuku phonon na-achịkwa, wee nweta arụmọrụ dị elu okpukpu abụọ nke ndị na-ebughị nha nhata. N'ebe okpomọkụ dị n'ime ụlọ, ike ọnụ ụzọ dị nso na njedebe usoro ihe atụ (dịka ọmụmaatụ, ọdịiche nke semiconductor) na nchọpụta nchọpụta nke infrared avalanche detector ruru 10000 photon larịị.
Ọmụmụ ihe a dabere na atom-layer self-doped tungsten diselenide (WSe₂) homojunction (metal chalcogenide mgbanwe akụkụ abụọ, TMD) dị ka ihe na-enweta ego maka oke oke ibu. A na-enweta nbibi nke ntụgharị asụsụ gbasara ohere site n'ichepụta mgbanwe nrịgo elu elu iji kpalite mpaghara ọkụ eletrik siri ike “sike” na mpaghara mutant homojunction interface.
Tụkwasị na nke ahụ, ọkpụrụkpụ atọm nwere ike ịkwụsị usoro mgbasa ozi nke ọnọdụ phonon na-achịkwa, wee ghọta usoro ngwa ngwa na ịba ụba nke ụgbọelu na-adịghị nhata na mfu dị ala. Nke a na-ebute ike oke mmiri ozuzo n'ime ụlọ dị nso na njedebe usoro ihe omume ya bụ bandgap semiconductor ihe dịka ọmụmaatụ. E belatara voltaji nke oke oke mmiri site na 50 V ruo 1.6 V, na-enye ndị nyocha ohere iji sekit dijitalụ nwere obere voltaji tozuru oke iji chụpụ oke mmiri.fotodetectoryana draịva diode na transistor. Ọmụmụ ihe a na-achọpụta ngbanwe nke ọma na itinye n'ọrụ nke ike na-ebu ibu na-abụghị nke nha site n'ichepụta mmetụta ịba ụba nke ala ọnụ ala, nke na-enye echiche ọhụrụ maka mmepe nke ọgbọ na-esote nke nwere mmetụta siri ike, ọnụ ala dị ala na nnukwu uru nke teknụzụ nchọpụta infrared.
Oge nzipu: Eprel 16-2025