Ọrụ dị elu nke na-achịkwa onwe yaihe nchọpụta foto infrared
infraredihe nchọpụta fotonwere njirimara nke ikike mgbochi mgbochi siri ike, ikike ịmata ihe mgbaru ọsọ siri ike, ọrụ ihu igwe niile na ezigbo nzuzo. Ọ na-arụ ọrụ dị mkpa na ngalaba dịka ọgwụ, agha, teknụzụ mbara igwe na injinia gburugburu ebe obibi. N'ime ha, nke na-eduzi onwe ya bụ nke na-achịkwa ihe niile.nchọpụta fotoelectricchip nke nwere ike ịrụ ọrụ n'adabereghị onwe ya na-enweghị ike ọzọ sitere na mpụga adọtawo uche dị ukwuu n'ọhịa nchọpụta infrared n'ihi arụmọrụ pụrụ iche ya (dịka nnwere onwe ike, nnukwu mmetụta na nkwụsi ike, wdg). N'ụzọ dị iche, chip nchọpụta fotoelectric ọdịnala, dị ka chip infrared dabere na silicon ma ọ bụ narrowbandgap semiconductor, ọ bụghị naanị chọrọ voltaji bias ọzọ iji kpalie nkewa nke ndị na-ebu foto emepụtara iji mepụta photocurrents, kamakwa ọ chọrọ sistemụ oyi ọzọ iji belata mkpọtụ okpomọkụ ma melite nzaghachi. Ya mere, ọ ghọwo ihe siri ike imezu echiche na ihe achọrọ ọhụrụ nke ọgbọ na-esote nke chip nchọpụta infrared n'ọdịnihu, dị ka obere oriri ike, obere nha, obere ọnụ ahịa na arụmọrụ dị elu.
N'oge na-adịbeghị anya, ndị otu nyocha si China na Sweden atụpụtala mgbawa nchọpụta fotoelectric ọhụrụ nke infrared short-wave infrared (SWIR) nke dabere na fim/alumina/otu kristal silicon graphene. N'okpuru mmetụta njikọta nke mmetụta gate optical nke interface heterogeneous na ubi eletriki arụnyere n'ime ya kpalitere, chip ahụ gosipụtara arụmọrụ nzaghachi na nchọpụta dị elu na voltaji efu. Chip nchọpụta fotoelectric nwere ọnụego nzaghachi A dị elu dị ka 75.3 A/W na ọnọdụ onwe onye, ọsọ nchọpụta nke 7.5 × 10¹⁴ Jones, na arụmọrụ quantum mpụga dị nso na 104%, na-eme ka arụmọrụ nchọpụta nke otu ụdị chips dabere na silicon dịkwuo mma site na ndekọ 7 nke nha. Na mgbakwunye, n'okpuru ụdị draịva ọdịnala, ọnụego nzaghachi nke chip, ọnụego nchọpụta, na arụmọrụ quantum mpụga niile dị elu dị ka 843 A/W, 10¹⁵ Jones, na 105% n'otu n'otu, ha niile bụ ụkpụrụ kachasị elu akọpụtara na nyocha ugbu a. Ka ọ dị ugbu a, nchọpụta a gosikwara na ojiji nke chip nchọpụta fotoelectric n'ụwa n'ezie n'ọhịa nke nkwukọrịta anya na onyonyo infrared, na-egosipụta nnukwu ikike ojiji ya.
Iji mụọ arụmọrụ fotoelectric nke fotodetector dabere na graphene nanoribbons /Al₂O₃/ otu kristal silicon, ndị nchọpụta nwalere ya static (current-voltage curve) na dynamic characteristic response (current-time curve). Iji nyochaa njirimara nzaghachi anya nke graphene nanoribbon /Al₂O₃/ monocrystalline silicon heterostructure photodetector n'okpuru voltaji bias dị iche iche, ndị nchọpụta tụrụ nzaghachi ike nke ngwaọrụ ahụ na 0 V, -1 V, -3 V na -5 V bias, yana njupụta ike anya nke 8.15 μW/cm². Photocurrent na-abawanye na reverse bias ma na-egosi ọsọ nzaghachi ngwa ngwa na voltaji bias niile.
N'ikpeazụ, ndị nchọpụta ahụ mepụtara sistemụ onyonyo ma nweta onyonyo infrared dị mkpụmkpụ nke nwere ike iji aka ha mee ihe. Sistemụ ahụ na-arụ ọrụ n'enweghị nsogbu ọ bụla ma ọ nweghị ike iri ya ma ọlị. E jiri ihe mkpuchi ojii nwere usoro "T" (dịka egosiri na Foto 1) nyochaa ikike onyonyo nke fotodetector.
Na mmechi, nchọpụta a mepụtara ihe nchọpụta foto nke nwere ike iji aka ya dabere na graphene nanoribbons ma nweta ọnụego nzaghachi dị elu nke na-agbawa ndekọ. Ka ọ dị ugbu a, ndị nchọpụta gosipụtara ike nkwukọrịta na onyonyo nke a nke ọma.ihe nchọpụta foto na-aza nke ọmaMmezu nke nnyocha a abụghị naanị na ọ na-enye ụzọ bara uru maka mmepe nke graphene nanoribbons na ngwaọrụ optoelectronic dabere na silicon, kamakwa ọ na-egosi arụmọrụ ha dị mma dị ka ihe nchọpụta infrared dị mkpụmkpụ nke na-arụ ọrụ onwe ya.
Oge ozi: Eprel-28-2025